Method of fabricating nano-size thin wires and devices made of such thin wires
AssigneeAdvantest Corporation
InventorMasao Watanabe
Life of this patent
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Abstract
A single-crystal substrate is prepared which has the (100) crystal plane with a step line formed therein by cleaving an MgO single crystal. By evaporating metal onto the cleavage plane, with a mask wire of platinum disposed at a distance from the cleavage plane and extended in a direction across the step line, a pair of metal thin film electrodes separated by a gap are epitaxially grown. By this, a step line corresponding to the cleavage-plane step line is formed in the surface of each of the metal thin film electrodes. Metal is further evaporated onto the metal thin film electrodes at a low rate, by which nano-size thin wires extending along the step lines are grown so that they approach each other and are finally connected to each other.
Claims4
A nano-size thin wire making method, comprising the steps of:
- a) providing a single-crystal substrate having a cleavage plane with at least one cleavage-plane step line formed therein by cleaving an ionic single crystal;
- b) evaporating a metal onto said cleavage plane in a vacuum chamber, with a mask wire disposed at a distance from said cleavage plane and extended in a direction intersecting the cleavage-plane step line;
- c) forming a pair of metal thin film electrodes, which have marginal edges facing each other across a gap corresponding to the mask wire and each having, on its surface, a surface step line corresponding to the cleavage-plane step line, on the cleavage plane;
- and
- d) evaporating a semiconductive or conductive material onto the pair of metal thin film electrodes to grow nano-size thin wires from the surface step lines on the pair of metal thin film electrodes so that the thin wires are connected to each other at their tips above the gap.
Dependencies are inferred from the claim text.