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US 5,330,584 AGranted
Solar cell
AssigneeSharp Kabushiki Kaisha
InventorsTatsuo Saga, Tadashi Hisamatsu, Toshinobu Matsutani
Life of this patent
Estimating the term…
Abstract
A solar cell includes a first semiconductor region of a P type, a second semiconductor region of an N type in contact with the first semiconductor region so as to form a PN junction therebetween, and a third semiconductor region of a P.sup.+ type in contact with both the first and second semiconductor regions and having a higher impurity concentration than that of the first semiconductor region.
Claims17
A solar cell, comprising:
- a first semiconductor region of a first conductivity type;
- a second semiconductor region of a second conductivity type in contact with said first semiconductor region so as to form a PN junction therebetween;
- a third semiconductor region of the first conductivity type in contact with both said first and second semiconductor regions to form a bypass diode, said third semiconductor region having an impurity concentration higher than the impurity concentration of said first semiconductor region;
- and
- an electrode comprising a plurality of spaced apart elements formed on a surface of said second semiconductor region,
- wherein said third semiconductor region includes a plurality of island-like regions formed in said second semiconductor region each of said plurality of island-like regions being formed in the spaces between said spaced apart elements of said electrode without contacting said electrode.
3 more elements
A solar cell, comprising:
- a first semiconductor region of a first conductivity type;
- a second semiconductor region of a second conductivity type in contact with said first semiconductor region so as to form a PN junction therebetween;
- a third semiconductor region of the first conductivity type in contact with both said first and second semiconductor regions to form a bypass diode, said third semiconductor region having an impurity concentration higher than the impurity concentration of said first semiconductor region;
- and
- an electrode comprising a plurality of spaced apart elements formed on a surface of said second semiconductor region,
- wherein said third semiconductor region comprises a plurality of island-like regions formed along a major portion of the periphery of said second semiconductor region and is formed without contacting said electrode.
3 more elements
A solar cell, comprising:
- a first semiconductor region of a first conductivity type;
- a second semiconductor region of a second conductivity type in contact with said first semiconductor region so as to form a PN junction therebetween;
- a third semiconductor region of the first conductivity type in contact with both said first and second semiconductor regions to form a bypass diode, said third semiconductor region having an impurity concentration higher than the impurity concentration of said first semiconductor region;
- and
- electrodes formed on a surface of said second semiconductor region,
- wherein said third semiconductor region is formed as a plurality of well-like regions extending from said PN junction into said first semiconductor region and is formed without contacting said electrodes.
3 more elements
Dependencies are inferred from the claim text.