Integrated semiconductor memory array and method for operating the same

An integrated semiconductor memory array, comprising:

• a memory region organized in lines and columns;
• a writing buffer memory associated with said memory region for serial-parallel conversion of data to be written in, a writing pointer and an input buffer associated with said writing buffer memory;
• a reading buffer memory associated with said memory region for parallel/serial conversion of data to be read out, a reading pointer and an output buffer associated with said reading buffer memory;
• a control device being formed of a memory control circuit and a data flow control circuit for controlling a data flow between said memory region and said writing buffer memory and between said memory region and said reading buffer memory;
• a writing column address decoder controlling said writing pointer and being associated with said writing buffer memory, a writing address control unit connected to said writing column address decoder, and a writing address register connected to said writing address control unit;
• and
• a line address decoder being associated with said memory control circuit and said memory region and being triggered by said writing address control unit.

A method for operating a semiconductor memory array having a memory region organized in lines and columns;

• a writing buffer memory associated with the memory region for serial-parallel conversion of data to be written in, a writing pointer and an input buffer associated with the writing buffer memory;
• a reading buffer memory associated with the memory region for parallel/serial conversion of data to be read out, a reading pointer and an output buffer associated with the reading buffer memory;
• a control device being formed of a memory control circuit and a data flow control circuit for controlling a data flow between the memory region and the writing buffer memory and between the memory region and the reading buffer memory;
• a reading column address decoder controlling the reading pointer and being associated with the reading buffer memory, a reading address control unit connected to the reading column address decoder, and a reading address register connected to the reading address control unit;
• and a line address decoder being associated with the memory control circuit and the memory region and being triggered by the reading address control unit, which comprises:
• reading bits of a reading address signal as a reading address into the reading address register by means of a reading clock signal, during an active stage of a reading control signal supplied to the reading address control unit;
• activating a reading reset signal supplied to the reading pointer, no earlier than after a minimum period after a transition of the reading control signal to an inactive state;
• reading out output data from a memory region associated with the previously read address, after activation of the reading reset signal;
• possibly again activating the reading control signal and thereby reading in a new address, during the process of reading out data;
• then tripping a new process of reading out data by a subsequently activated reading reset signal, if the reading control signal has been reactivated;
• and
• incrementing the previously read-in address independently of a new reading reset signal, if the reading control signal has not been activated.

A method for operating a semiconductor memory array having a memory region organized in lines and columns;

• a writing buffer memory associated with the memory region for serial-parallel conversion of data to be written in, a writing pointer and an input buffer associated with the writing buffer memory;
• a reading buffer memory associated with the memory region for parallel/serial conversion of data to be read out, a reading pointer and an output buffer associated with the reading buffer memory;
• a control device being formed of a memory control circuit and a data flow control circuit for controlling a data flow between the memory region and the writing buffer memory and between the memory region and the reading buffer memory;
• a writing column address decoder controlling the writing pointer and being associated with the writing buffer memory, a writing address control unit connected to the writing column address decoder, and a writing address register connected to the writing address control unit;
• and a line address decoder being associated with the memory control circuit and the memory region and being triggered by the writing address control unit, which comprises:
• reading bits of a writing address signal as a writing address into the writing address register by means of a writing clock signal, during an active stage of a writing control signal supplied to the writing address control unit;
• activating a writing reset signal supplied to the writing pointer, no earlier than after a minimum period after a transition of the writing control signal to an inactive state;
• writing in input data to a memory region associated with the previously read-in writing address, after activation of the writing reset signal;
• possibly again activating the writing control signal and thereby reading in a new address, during the process of writing in data;
• then tripping a new process of writing in data by a subsequently activated writing reset signal, if the writing control signal has been reactivated;
• and
• incrementing the previously read-in address independently of a new writing reset signal, if the writing control signal has not been activated.

A method for operating a semiconductor memory array having a memory region organized in lines and columns;

• a writing buffer memory associated with the memory region for serial-parallel conversion of data to be written in, a writing pointer and an input buffer associated with the writing buffer memory;
• a reading buffer memory associated with the memory region for parallel/serial conversion of data to be read out, a reading pointer and an output buffer associated with the reading buffer memory;
• a control device being formed of a memory control circuit and a data flow control circuit for controlling a data flow between the memory region and the writing buffer memory and between the memory region and the reading buffer memory;
• a reading column address decoder controlling the reading pointer and being associated with the reading buffer memory, a reading address control unit connected to the reading column address decoder, and a reading address register connected to the reading address control unit;
• a line address decoder being associated with the memory control circuit and the memory region and being triggered by the reading address control unit;
• a writing column address decoder controlling the writing pointer and being associated with the writing buffer memory;
• a writing address control unit connected to the writing column address decoder;
• and a writing address register connected to the writing address control unit;
• the line address decoder being triggered by the writing address control unit, which comprises:
• reading bits of writing and reading address signals as a writing and reading addresses into the writing and reading address registers by means of writing and reading clock signals, during an active stage of writing and reading control signals supplied to the writing and reading address control units;
• activating writing and reading reset signals supplied to the writing and reading pointers, no earlier than after a minimum period after a transition of the writing and reading control signals to an inactive state;
• writing in and reading out input and output data to and from a memory region associated with the previously read-in writing and reading addresses, after activation of the writing and reading reset signals;
• possibly again activating the writing and reading control signals and thereby reading in a new address, during the process of writing in and reading out data;
• then tripping a new process of writing in and reading out data by subsequently activated writing and reading reset signals, if the writing and reading control signals have been reactivated;
• and
• incrementing the previously read-in address independently of new writing and reading reset signals, if the writing and reading control signals have not been activated.