Memory device

A memory cell array device wherein memory cells having a multi-layered structure in which a first conductivity layer is formed on one major surface of an insulating layer of a Langmuir-Blodgett film and a second conductive layer is formed on the other major surface to sandwich a ferroelectric layer for variably changing a polarization state by inputting a charge are arranged in a matrix form, and write/read access of data is performed by a change in polarization of said ferroelectric layer of said memory cell using tunnel switch property of said insulating layer, comprising:

• selecting means for selecting a desired memory cell in said memory cell array;
• reading means for reading data stored in said memory cell selected by said selecting means and for sending the data as inverted/non-inverted charges;
• data erasing means for erasing previous data read and retained by said reading means before new data is read and for setting said reading means in an initial state;
• and
• rewriting means for detecting destructive read access of data stored in a desired memory cell in response to a reading operation of said reading means and for rewriting data ready by said reading means at a predetermined timing on the basis of a detection signal.