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US 5,329,481 AGranted
Semiconductor device having a memory cell
AssigneeU.S. Philips Corporation
InventorsEvert Seevinck, Maarten Vertregt, Godefridus A. M. Hurkx
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AssigneeU.S. Philips Corporation
InventorsEvert Seevinck, Maarten Vertregt, Godefridus A. M. Hurkx
Estimating the term…
A semiconductor device with at least one programmable memory cell which includes a bipolar transistor (T.sub.1) with an emitter (11) and a collector (12) of a first conductivity type and a base (10) of a second, opposite conductivity type. The emitter (11) and collector (12) are coupled to a first supply line (100) and a second supply line (200), respectively. The base (10) is coupled to writing means (WRITE) through a control transistor (T.sub.2). Reading means (READ) are included in a current path (I) which extends between the first supply line (100) and the second supply line (200) and which includes a current path between the emitter (11) and collector (12). In a preferred embodiment, the collector (12) is in addition coupled to the second supply line (200) via a switchable load (T.sub.5).
A semiconductor device comprising a semiconductor body provided with a programmable memory cell which comprises a bipolar transistor with an emitter and a collector of a first conductivity type mutually separated by a base of a second, opposite conductivity type, the emitter and the collector being coupled to a first and a second supply line, respectively, and the base being coupled to writing means through at least a control transistor provided with a control electrode, characterized in that the memory cell is coupled to reading means which are included in a current path which extends between the first and the second supply line and which comprises a current path between the emitter and the collector of the bipolar transistor, the reading means being connected between the emitter and the first supply line.
Dependencies are inferred from the claim text.