US 5,329,271 A · Semiconductor strain sensor

Abstract

A semiconductor strain sensor includes a silicon substrate, a strain resistive element and electrodes. The silicon substrate has a deformable portion which is deformed when stress is applied to it. The strain resistive element is formed on the deformable portion and has an at least a first layer and a second layer which form a heterojunction between them. The first layer is doped with impurities so that a two-dimensional carrier gas layer is formed in the second layer near the heterojunction. The two-dimensional carrier gas layer has carriers originating from the impurities. The electrodes electrically contact the two dimensional carrier gas layer. Change of resistance of the strain resistive element in accordance with the stress is detected through the electrodes.

Claims17

Dependent claims

A semiconductor strain sensor, comprising:

a silicon substrate having a deformable portion which is deformed when stress is applied thereto;
a strain resistive element formed on said deformable portion, said strain resistive element having at least a first layer and a second layer which form a heterojunction therebetween, said first layer being doped with impurities so to form a two-dimensional carrier gas layer in said second layer near said heterojunction, and said two-dimensional carrier gas layer having carriers originating from said impurities;
and
at least two electrodes for detecting change of resistance of said strain resistance element in accordance with said stress, said electrodes electrically contacting said two-dimensional carrier gas layer.

1 more element

Dependencies are inferred from the claim text.

Semiconductor strain sensor

Life of this patent

Semiconductor strain sensor

Life of this patent

Abstract

Claims17