Field emission structures produced on macro-grain polysilicon substrates
AssigneeMicron Technology, Inc.
InventorsDavid A. Cathey, J. Brett Rolfson, Tyler A. Lowrey, Trung T. Doan
Life of this patent
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Abstract
A baseplate for a flat panel display comprising relatively thick semiconductor substrate, wherein the semiconductor substrate is a macro-grain polycrystalline substrate, which is amorphized by ion implantation or reformed by recrystallization, to obscure the grain boundaries, thereafter redundant circuitry may be fabricated thereon to further enhance product yield.
Claims20
A baseplate for use in a flat panel display, said baseplate comprising:
- a semiconductor substrate said substrate being a relatively thick macro-grain polycrystalline substrate, said substrate being a first side and a second side;
- a conductive layer being disposed superjacent said first side of said substrate;
- at least one insulating layer being disposed superjacent said conductive layer, said insulating layer having a plurality of spaces disposed therein;
- an anode grid being disposed superjacent said insulating layer, said anode grip having a plurality of cavities disposed therein, said cavities having a shape, said anode grid being disposed on said insulating layer such that said spaces of said insulating layer are contiguous with said cavities in said anode grid;
- a plurality of cathode tips being disposed superjacent said conductive layer, said cathode tips extending through said spaces in said insulating layer to a point in said cavities of said anode grid such that a voltage differential between sand anode grid and one of said cathode tips will cause electrons to be emitted from said cathode tip;
- and
- a power source, said power source providing said voltage differential between said anode grip and said cathode tips.
A process for forming a baseplate having a macro-grain polysilicon substrate for use in a flat panel display, said baseplate fabricated from the following steps comprising:
- reforming macro-grain substrate, said substrate having grain boundaries, said boundaries being approximately 0.5 mm apart, whereby said reforming of said macro-grain substrate obscures said grain boundaries;
- patterning said substrate, thereby defining at least one emitter;
- etching said substrate, thereby exposing said emitter,
- depositing an insulating layer superjacent said substrate and at a distance around said emitter;
- and
- depositing a conductive layer in a pattern superjacent said insulating layer, said conductive layer functioning as an anode grid.
A process for forming a baseplate having a macro-grain polysilicon substrate for use in a flat panel display, said baseplate fabricated from the following steps comprising:
- applying an insulator material superjacent said macro-grain substrate;
- applying a silicon layer superjacent said insulator material;
- patterning said silicon layer thereby defining a site of at least one emitter;
- etching said substrate, thereby forming said emitter at said site;
- depositing an insulating layer superjacent said substrate and at a periphery of said emitter;
- and
- depositing a conductive layer in a pattern superjacent said insulating layer, said conductive layer functioning as an anode grid.
Dependencies are inferred from the claim text.