Semiconductor integrated circuit device analyzable by using laser beam inducing current
AssigneeNEC Corporation
InventorMasaru Sanada
Life of this patent
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Abstract
A semiconductor integrated circuit device is subjected to a non-contact and non-destructive analysis using a laser beam after fabrication process, and impurity regions are previously formed in an area assigned to wiring strips regardless of the circuit components, wherein the impurity regions are selectively coupled with the wiring strips for supplying optical beam induced current to a target circuit component so as to analyze the switching action of the target circuit component.
Claims4
A semiconductor integrated circuit device fabricated on a single semiconductor substrate of one conductivity type having a major surface, said device comprising:
- a) circuit components formed in a first area assigned thereto in said major surface;
- b) a multilayer wiring structure provided over said major surface, and having wiring strips extending over a second area defined in said major surface and selectively coupled with said circuit components;
- c) a plurality of impurity regions of the opposite conductivity type formed in said second area and selectively connected with said wiring strips, an optical radiation being radiated through said wiring strips and onto said plurality of impurity regions for producing carriers;
- and
- d) at least one terminal electrically connected with one of said wiring strips so that said carriers are detectable through said one of said wiring strips and one of said circuit components.
Dependencies are inferred from the claim text.