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US 5,329,134 AGranted
Superluminescent diode having a quantum well and cavity length dependent threshold current
AssigneeInternational Business Machines Corporation
InventorCharles B. Morrison
Life of this patent
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Abstract
A quantum well is formed in the active region of a superluminescent diode by limiting the active region to a thickness on the order of the carrier deBroglie wavelength. Increased efficiency of recombination of electrons and holes due to the existence of the quantum well allows operation at threshold currents which are substantially proportional to cavity length. Variation in threshold current with temperature is also reduced.
Claims12
A superluminescent semiconductor diode including:
- an active region positioned between two semiconductor cladding layers, and
- a waveguide positioned adjacent said active region and having an axis and termination means for limiting internal reflection at ends of said waveguide,
- said active region including a layer having a thickness on the order of a carrier deBroglie wavelength.
Dependencies are inferred from the claim text.