US 5,329,130 A · Charged particle beam exposure method and apparatus

Abstract

A charged particle beam exposure method is used to draw a pattern on a substrate which is carried on a continuously moving stage by deflecting a charged particle beam. The method includes moving the stage in a direction parallel to an axis of a coordinate system of the substrate; generating first deflection data D.sub.1 in a coordinate system of the stage by obtaining a position coordinate of an reference position of a pattern region including the pattern to be drawn relative to a target position of the stage, and for obtaining second deflection data D.sub.2 in a coordinate system of the substrate describing a position coordinate of the pattern to be drawn from the reference position of the pattern region to which the pattern belongs; carrying out with respect to first deflection data D.sub.1 a first correcting operation including correction of pattern distortion inherent to a charged particle beam exposure apparatus, and for carrying out the first correcting operation and a second correcting operation with respect to second deflection data D.sub.2 after making a coordinate conversion to the coordinate system of the stage, where second correcting operation corrects a rotation error component relative to the stage caused by movement of the substrate; obtaining third deflection data D.sub.3 ' which describes a position coordinate of the pattern to be drawn from the present position of the stage by adding corrected first deflection data D.sub.1 ' and corrected second deflection data D.sub.2 '; and controlling a deflector based on third deflection data D.sub.3 '.

Claims12

Dependent claims

A charged particle beam exposure method for drawing a pattern on a substrate which is carried on a continuously moving stage by deflecting a charged particle beam by a deflector means depending on the pattern which is to be drawn, said charged particle beam exposure method comprising the steps of:

(a) moving the stage in a direction parallel to an axis of a coordinate system of the substrate;
(b) generating a first deflection data D.sub.1 in a coordinate system of the stage by obtaining a position coordinate of a reference position of a pattern region which includes the pattern which is to be drawn relative to a target position of the stage, and for obtaining a second deflection data D.sub.2 in the coordinate system of the substrate describing a position coordinate of the pattern which is to be drawn from the reference position of the pattern region to which the pattern belongs;
(c) carrying out with respect to the first deflection data D.sub.1 a first correcting operation which includes correction of a pattern distortion inherent to a charged particle beam exposure apparatus, and for carrying out the first correcting operation and a second correcting operation with respect to the second deflection data D.sub.2 after making a coordinate conversion to the coordinate system of the stage, said second correcting operation correcting a rotation error component relative to the stage caused by the movement of the substrate;
(d) obtaining a third deflection data D.sub.3 ' which describes a position coordinate of the pattern which is to be drawn from the present position of the stage by adding a corrected first deflection data D.sub.1 ' and a corrected second deflection data D.sub.2 ' which are obtained in said step (c);
and
(e) controlling the deflector means based on the third deflection data D.sub.3 '.

3 more elements

A charged particle beam exposure apparatus comprising:

a movable stage which carries a substrate;
stage moving means for continuously moving said stage in a direction parallel to an axis of a coordinate system of the substrate;
a charged particle beam generating source for generating a charged particle beam;
deflector means for deflecting the charged particle beam depending on a pattern which is to be drawn and for drawing the pattern on the substrate by the deflected charged particle beam;
generating means for generating a first deflection data D.sub.1 in a coordinate system of the stage by obtaining a position coordinate of a reference position of a pattern region which includes the pattern which is to be drawn relative to a target position of the stage;
obtaining means for obtaining a second deflection data D.sub.2 in a coordinate system of the substrate describing a position coordinate of the pattern which is to be drawn from the reference position of the pattern region to which the pattern belongs;
first correcting operation means for carrying out with respect to the first deflection data D.sub.1 a first correcting operation which includes correction of a pattern distortion inherent to the charged particle beam exposure apparatus;
second correcting operation means for carrying out the first correcting operation and a second correcting operation with respect to the second deflection data D.sub.2 after making a coordinate conversion to the coordinate system of the stage, said second correcting operation correcting a rotation error component relative to the stage caused by the movement of the substrate;
and
adding means for obtaining a third deflection data D.sub.3 ' which describes a position coordinate of the pattern which is to be drawn from the present position of said stage by adding a corrected first deflection data D.sub.1 ' which is obtained from said first correcting operation means and a corrected second deflection data D.sub.2 ' which is obtained from said second correcting operation means,
said deflector means being controlled based on the third deflection data D.sub.3 '.

8 more elements

Dependencies are inferred from the claim text.

Charged particle beam exposure method and apparatus

Life of this patent

Charged particle beam exposure method and apparatus

Life of this patent

Abstract

Claims12