Back to results
US 5,329,068 AGranted
Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsSeiichi Hirata, Akito Yoshida
Life of this patent
Estimating the term…
Abstract
An insulating film is formed on a semiconductor substrate, and an Al electrode pad is provided on the insulating film. The pad is electrically connected to a positive element by means of a signal line. A protection film is formed on the pad and insulating film. First and second openings are formed in the protection film. A barrier metal layer is formed on the inner periphery of the first opening and on the protection film. An Au bump is formed on the barrier metal layer. The Al electrode pad is exposed through the second opening.
Claims6
A semiconductor device comprising:
- a semiconductor substrate having a positive element formed thereon;
- a first insulating film formed on the semiconductor substrate;
- an electrode pad formed on the first insulating film and electrically connected to the positive element;
- a second insulating film on the electrode pad, the second insulating film having a first opening;
- and
- a bump extending within the first opening and overlying the second insulating film;
- the second insulating film including a second opening, the electrode pad being exposed through the second opening.
4 more elements
A semiconductor device comprising:
- a semiconductor substrate having a positive element formed thereon;
- a first insulating film formed on the semiconductor substrate;
- an electrode pad formed on the first insulating film and electrically connected to the positive element;
- a second insulating film on the electrode pad, the second insulating film having first and second openings;
- and
- a bump extending within the first opening and overlying the second insulating film;
- the electrode pad including a third opening, a corresponding portion of the first insulating film located under the second opening being exposed through the third opening.
4 more elements
A semiconductor device comprising:
- a semiconductor substrate having a positive element formed thereon;
- a first insulating film formed on the semiconductor substrate;
- an electrode pad formed on the first insulating film and electrically connected to the positive element;
- a second insulating film on the electrode pad, the second insulating film having a first opening;
- and
- a bump extending within the first opening and overlying the second insulating film;
- the second insulating film including a plurality of second openings and the electrode pad being exposed through the plurality of second openings.
4 more elements
A semiconductor device comprising:
- a semiconductor substrate having a positive element formed thereon;
- a first insulating film formed on the semiconductor substrate;
- an electrode pad formed on the first insulating film and electrically connected to the positive element;
- a second insulating film on the electrode pad, the second insulating film having a first opening;
- and
- a bump extending within the first opening and overlying the second insulating film, the second insulating film having a plurality of second openings and the electrode pad being exposed through the plurality of second openings;
- the electrode pad including at least a third opening, a corresponding portion of the first insulating film located under the second opening being exposed through the third opening.
4 more elements
A semiconductor device comprising:
- a semiconductor substrate having a positive element formed thereon;
- a first insulating film formed on the semiconductor substrate;
- an electrode pad formed on the first insulating film and electrically connected to the positive element;
- a second insulating film on the electrode pad, the second insulating film having a first opening;
- and
- a bump extending within the first opening and overlying the second insulating film, the second insulating film having a second opening and the electrode pad being exposed through the second opening, the second opening receiving deformations of the electrode pad to prevent damage to the electrode pad.
3 more elements
A semiconductor device comprising:
- a semiconductor substrate having a positive element formed thereon;
- a first insulating film formed on the semiconductor substrate;
- an electrode pad formed on the first insulating film and electrically connected to the positive element;
- a second insulating film on the electrode pad, the second insulating film having a first opening;
- and
- a bump extending within the first opening and overlying the second insulating film, the second insulating film having a plurality of second openings and the electrode pad being exposed through the plurality of second openings, the plurality of second openings receiving deformations of the electrode pad to prevent damage to the electrode pad.
3 more elements
Dependencies are inferred from the claim text.