Method of making a photodetector array having high pixel density
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsCarmen I. Huber, Tito E. Huber, Tak-Kin Chu, Nicholas Caviris
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Abstract
Photoconductive semiconductor material is injected into narrow and closely paced cylindrical channels in an insulating matrix plate to form pixel elements of a high resolution photodetector array. A transparent conductive layer is deposited on one surface of the photoconductor array while light reflecting pads are formed on the elements at the opposite surface. Subsequently, a layer of light modulating material and a transparent conductive layer are deposited on the opposite surface to obtain a high resolution spatial light modulator.
Claims2
A method of making a photodetector device which includes an electrically insulating matrix having a plurality of pins made of a photoconducting semiconductor embedded in channels formed in the matrix to provide a pixel density substantially exceeding 1,000,000 per square centimeter, comprising the steps of:
- heating the photoconducting semiconductor to a molten state;
- injecting said photoconducting semiconductor in the molten state into the channels of the matrix;
- cooling the matrix to solidify the injected photoconducting semiconductor into the pins;
- chemically etching the pins at an interface surface of the matrix to form spaces in the channels between the pins and said interface surface;
- and filling said spaces in the channels with light reflecting material.
Dependencies are inferred from the claim text.