Method of forming film by plasma CVD
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsKiyoshi Takahashi, Mikio Murai, Masaru Odagiri, Hideyuki Ueda, Yukikazu Ohchi, Tatsuya Hiwatashi
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Abstract
A method of forming a film on a substrate by plasma CVD, comprising the steps of: providing a discharge tube in a vacuum chamber; providing a partition wall around the discharge tube; evacuating space between the discharge tube and the partition wall to vacuum; providing the substrate at a position confronting the discharge tube; and effecting plasma discharge in the discharge tube.
Claims11
A method of forming a film on a substrate by plasma CVD, comprising the steps of:
- providing a discharge tube in a vacuum chamber;
- providing a partition wall around the discharge tube so as to define a space therebetween;
- evacuating the space between the discharge tube and the partition wall;
- providing the substrate at a position confronting the discharge tube;
- and
- effecting plasma discharge in the discharge tube to form a film on the substrate.
A method of forming a film on a substrate by plasma CVD, comprising the steps of:
- providing a discharge tube having a distal end portion in a vacuum chamber;
- providing the substrate at a position confronting the discharge tube;
- providing a shield plate at the distal end portion of the discharge tube such that the shield plate confronts and extends substantially parallel with the substrate;
- and
- effecting plasma discharge in the discharge to form a film on the substrate.
Dependencies are inferred from the claim text.