Process for making metallized vias in diamond substrates
AssigneeGeneral Electric Company
InventorsCharles D. Iacovangelo, Elihu C. Jerabek, Ronald H. Wilson, Peter C. Schaefer
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Abstract
A process for making metallized vias in diamond substrates is disclosed. The process involves laser-drilling a plurality of holes in a CVD diamond substrate and depositing tungsten, or a similar refractory metal, in the holes by low pressure CVD to provide substantially void-free metallized vias. Diamond substrates having metallized vias are also disclosed. The structures are useful for making multichip modules for high clock rate computers.
Claims11
A process for creating a metallized aperture in a diamond substrate comprising the steps of
- (a) providing a diamond substrate having one or more apertures, the surface of said diamond within said apertures being substantially free of contaminants;
- b) filling said apertures by low pressure chemical vapor deposition with tungsten.
A process for creating a metallized via in diamond substrate comprising the steps of:
- (a) providing a diamond substrate 100-500 .mu.m thick having one or more vias, the surface of said diamond within said vias being substantially pure diamond;
- b) filling said vias with tungsten by low pressure chemical vapor deposition at 450.degree.-750.degree. C.
A process for creating a metallized via in a diamond substrate comprising the steps of:
- (a) laser etching an aperture extending between two faces of said diamond substrate;
- (b) removing residual graphite and impurities from the surface of said diamond substrate within said aperture;
- and
- (c) depositing tungsten in said aperture by chemical vapor deposition at 450.degree.-650 .degree. C.
Dependencies are inferred from the claim text.