Conversion of fullerenes to diamond
OwnerDieter M. Grueninventor
Life of this patent
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Abstract
A method of forming synthetic diamond on a substrate. The method involves providing a substrate surface covered with a fullerene or diamond coating, positioning a fullerene in an ionization source, creating a fullerene vapor, ionizing fullerene molecules, accelerating the fullerene ions to energies above 250 eV to form a fullerene ion beam, impinging the fullerene ion beam on the substrate surface and continuing these steps to obtain a diamond film thickness on the substrate.
Claims3
A method of forming synthetic hydrogen defect free diamond film on a substrate surface having an initial coating selected from the group consisting of fullerene and diamond, comprising the steps of:
- (a) supplying a source of fullerenes with each fullerene molecule consisting of carbon-carbon bonds;
- (b) creating a vapor of said fullerenes with each fullerene molecule consisting of carbon-carbon bonds from said source of fullerenes;
- (c) providing energy to fullerene molecules in said vapor of fullerenes capable of forming fullerene ions with each of said fullerene molecules consisting of carbon-carbon bonds;
- (d) energizing said fullerene ions to energies of at least about 250 eV sufficient to enable fragmentation of said fullerene ions consisting of carbon-carbon bonds;
- (e) contacting said energized fullerene ions consisting of carbon-carbon bonds with said coating substrate surface;
- and
- (f) continuing said steps (a)-(e) to grow said hydrogen defect free diamond film on said coated substrate surface.
A method of forming synthetic hydrogen defect free film selected from the group consisting of diamond film and diamond-like film, comprising the steps of:
- (a) supplying a source of fullerenes with each fullerene molecule consisting of carbon-carbon bonds;
- (b) creating a vapor of said fullerenes consisting of carbon-carbon bonds from said source of fullerenes;
- (c) providing energy to fullerene molecules in said vapor of fullerenes capable of forming fullerene ions with each of said fullerene molecules consisting of carbon-carbon bonds;
- (d) energizing said fullerene ions to energies sufficient to enable fragmentation of said fullerene ions with each fullerene molecule consisting of carbon-carbon bonds;
- (e) contacting said energized fullerene ions consisting of carbon-carbon bonds with a diamond growth substrate surface and growing diamond on said surface;
- and
- (f) continuing said steps (a)-(e) to grow said hydrogen defect-free diamond film on said substrate surface.
A method of forming synthetic hydrogen defect free film selected from the group consisting of diamond film and diamond-like film, comprising the steps of:
- (a) supplying a source of fullerenes with each fullerene molecule consisting of carbon atoms;
- (b) creating a vapor of said fullerenes with each fullerene molecule consisting of carbon atoms from said source of fullerenes;
- (c) providing energy to fullerene molecules in said vapor of fullerenes capable of forming fullerene ions consisting of carbon atoms;
- (d) energizing said fullerene ions to energies sufficient to enable fragmentation of said fullerene ions consisting of carbon atoms;
- (e) contacting said energized fullerene ions consisting of carbon atoms with a diamond growth substrate surface and growing diamond on said surface;
- and
- (f) continuing said steps (a)-(e) to grow said hydrogen defect-free diamond film on said substrate surface.
Dependencies are inferred from the claim text.