Method of manufacturing semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsTetsuro Hanawa, Maria Op de Beeck
Life of this patent
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Abstract
A method of manufacturing semiconductor devices is provided which is improved so as to form a resist pattern even in a substrate having a step thereon with well controlled dimensional precision, and carry out etching of an underlying substrate with well controlled dimensional precision. An underlying film of an organic substance having the properties of sublimation, photo absorption and insolubility in an organic solvent is formed on a semiconductor substrate. A resist is applied onto the underlying film. Light is selectively irradiated on the resist. The resist is developed to form a resist pattern. The semiconductor substrate is etched with the resist pattern used as a mask.
Claims15
A method of manufacturing a semiconductor device, comprising the steps of:
- forming an underlying film of an organic substance having the properties of sublimation, photo absorption, and insolubility in an organic solvent on a semiconductor substrate;
- applying resist on said underlying film;
- selectively irradiating light to said resist;
- developing said resist for forming a resist pattern;
- and
- etching said semiconductor substrate with said resist pattern used as a mask.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming an underlying film of an organic substance having the properties of sublimation and insolubility in an organic solvent on a semiconductor substrate;
- doping an oxidizing gas in said underlying film for applying conductivity to said underlying film;
- applying resist onto said underlying film;
- effecting patterning on said resist with an electron beam;
- developing said resist for forming a resist pattern;
- and
- etching said semiconductor substrate with said resist pattern used as a mask.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming an underlying film of an organic substance having the properties of sublimation and insolubility in an organic solvent on a semiconductor substrate;
- doping an oxidizing gas in said underlying film for applying conductivity to said underlying film;
- applying resist onto said underlying film;
- patterning said resist;
- and
- implanting impurity ions in said semiconductor substrate with said patterned resist used as a mask.
Dependencies are inferred from the claim text.