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US 5,328,557 AGranted
Plasma treatment of O-rings
AssigneeMicron Semiconductor, Inc.
InventorGuy T. Blalock
Life of this patent
Estimating the term…
Abstract
A method for treating an O-ring to substantially eliminate the adhesion of wafers to the O-ring in semiconductor equipment, which method comprises the steps of: placing an O-ring in a reactor, exposing the O-ring to an ionizing gas for approximately two minutes, and placing the O-ring in the instrument in which the O-ring will function.
Claims14
A process for preventing excess surface adhesion in an O-ring, said process comprising the steps of:
- disposing an O-ring in a chamber;
- providing an atmosphere in said chamber by flowing at least one gas;
- exciting said atmosphere to form a plasma;
- and
- removing residue from said chamber through a pump.
2 more elements
A method for preparing an O-ring for use in a plasma reactor chamber, comprising the following steps:
- providing a planar plasma etch reactor, said reactor having an O-ring disposed therein, said O-ring having a contact surface;
- establishing a flow of gas comprising at least argon through said reactor, thereby creating an atmosphere;
- exciting a plasma in said atmosphere, said plasma reacting with said surface of said O-ring to create micro-roughness on said surface;
- and
- evacuating said interior of said reactor.
2 more elements
Dependencies are inferred from the claim text.