US 5,327,834 A · Integrated field-effect initiator

Abstract

An integrated field-effect initiator useful for the pyrotechnic initiation or detonation of explosives includes a semiconductor channel of a first conductivity type bounded on opposite ends by semiconductor material of an opposite conductivity type to define two PN junctions in the conduction path. The semiconductor channel is doped to define a conduction path of sufficiently high impedance to prevent unintended initiation. A gate electrode is positioned adjacent the channel and separated therefrom by an insulation layer to affect the conductivity of the channel as a function of a potential applied to the gate. In normal operation, an initiation electrical potential is applied to the opposite ends of the conduction path and a gate potential is applied to the gate to effect field-enhanced conduction in the path sufficient to allow vaporization of the path to cause initiation of an explosive material in contact with the path. In another embodiment, a slapper structure is mounted adjacent the channel and is propelled into the explosive to effect detonation. The initiator can be manufactured by conventional integrated circuit fabrication techniques and provides a normally inhibited device that requires application of a gate potential prior to initiation.

Claims20

Dependent claims

A semiconductor initiator comprising,

a semiconductor bridge extending between first and second electrical inputs, said bridge having an intermediate region thereof of a first conductivity type and regions at opposite ends of said intermediate region and of opposite conductivity type to define at least first and second PN junctions in said bridge between said first and second electrical inputs;
and
a field electrode adjacent to at least said intermediate region and insulated therefrom for providing a electric field in response to a selectively applied voltage sufficient for enhancing the conductivity of said intermediate region
wherein said first conductivity type is n-type and said opposite conductivity type of said regions at the opposite ends of said intermediate region is p-type doped with a p-type dopant at a concentration of about 10.sup.18 atoms/cm.sup.3.

1 more element

Dependencies are inferred from the claim text.

Integrated field-effect initiator

Life of this patent

Integrated field-effect initiator

Life of this patent

Abstract

Claims20