Semiconductor device having thin film transistor and method of manufacturing the same
AssigneeMistubishi Denki Kabushiki Kaisha
InventorTakeo Muragishi
Life of this patent
Estimating the term…
Abstract
A thin film transistor is used as a load transistor in a memory cell in a SRAM. A load thin film transistor is arranged on an interlayer insulating layer on the surface of a silicon substrate. A silicon layer in which source/drain regions of the thin film transistor are formed is covered with an oxidation preventing film. An interlayer insulating layer which is to be subject to high temperature reflow processing is formed on the surface of the oxidation preventing film. The oxidation preventing film is formed of polycrystalline silicon, amorphous silicon, silicon nitride, or the like and formed on the silicon layer in the thin film transistor directly or through an insulating layer to cover the surface of the silicon layer.
Claims9
A semiconductor device having a thin film transistor, comprising:
- a first insulating layer formed on a semiconductor substrate;
- a thin film transistor including a gate electrode layer and a silicon layer separated from each other by a second insulating layer and formed on the surface of said first insulating layer, said thin film transistor further including a channel region formed in said silicon layer in a position opposite to said gate electrode layer, and a pair of impurity regions formed on the both sides of said channel region;
- an oxidation preventing film formed over said thin film transistor, said oxidation preventing film arranged for preventing said silicon layer in said thin film transistor from being oxidized by preventing oxygen from passing beneath said oxidation preventing film;
- and
- a third insulating layer formed over said oxidation preventing film.
Dependencies are inferred from the claim text.