Electron beam lithography system
AssigneeHitachi, Ltd.
InventorsKatsuhiro Kawasaki, Takashi Matsuzaka, Hiroya Ohta, Toshihiko Kohno
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Abstract
An electron beam lithography system which generates phase shift pattern data relating to main patterns, and exposes the phase shift pattern on a mask plate by using an electron beam in accordance with instruction from a computer. An electron beam lithography system is provided which can remarkably decrease a time needed for preparing phase shift pattern data. The apparatus is furnished with a parameter table for storing equations to generate phase shift pattern data, and generates the phase shift pattern data by assigning original pattern data into equations in accordance with a corresponding instruction for applying a phase shift method, and automatically exposes the phase shift pattern.
Claims12
An electron beam lithography system comprising:
- a means for generating an electron beam,
- a means for forming a predetermined pattern on a target by scanning of said electron beam on the target, and
- a means for generating a phase shift pattern relating to said predetermined pattern.
An electron beam lithography system comprising:
- a means for generating an electron beam,
- a means for forming a predetermined main pattern on a target by scanning of said electron beam on the target, and
- a means for generating a phase shift pattern relating to said main pattern, wherein
- said means for generating said phase shift pattern includes a means for obtaining data which feature said phase shift pattern by calculation based on said main pattern.
An electron beam lithography system comprising:
- a means for generating an electron beam,
- a means for irradiating a target with said electron beam,
- a means for deflecting said electron beam so as to scan said target with said electron beam to form a main pattern,
- a means for controlling said irradiation and said deflection of said electron beam,
- a means for generating data of said main pattern,
- a means for generating data of said phase shift pattern relating to said data of said main pattern, and
- a means for selectively connecting either said means for generating data of said main pattern or said means for generating data of said phase shift pattern to said means for controlling so as to selectively form either a means for generating phase shift pattern relating to said main pattern,
- said main pattern or said phase shift pattern on said target.
An electron beam lithography system for exposing LSI main patterns on a phase shift mask plate by scanning an electron beam comprising:
- a means for generating pattern data from said LSI main patterns scanned by said electron beam,
- a means for generating a phase shift instruction, and
- a means for generating a phase shift pattern by using said pattern data from said main patterns in accordance with said instruction.
Dependencies are inferred from the claim text.