Liquid phase epitaxial process for producing three-dimensional semiconductor structures by liquid phase expitaxy

A method of manufacturing a three-dimensional semiconductive structure comprising a substrate having an active component connectable in a first circuit and at least one layer of a semiconductor material, said semiconductor layer having an active component connectable in a second circuit, having high structural perfection and having low mechanical stresses, said method comprising the steps of:

• (a) providing a substrate having a surface, said substrate surface being crystallographically oriented in such a fashion that during crystal growth, crystal growth velocity is smaller perpendicularly to said surface as compared to crystal growth velocity parallel to said surface,
• (b) depositing a mask pattern on said substrate surface, said mask pattern having mask pattern portions masking areas of said surface and narrow intermediate spaces between said mask portions, said intermediate spaces being narrower than said mask portions whereby said surface is exposed in said spaces to have an exposed area less than that of said masked areas;
• and
• (c) by means of liquid-phase epitaxy from solution, growing said semiconductor material on said surface exposed between said mask portions and over said mask pattern portions to form said semiconductor layer.