Process for forming resist pattern
AssigneeFujitsu Limited
InventorsAkiko Kotachi, Satoshi Takechi
Life of this patent
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Abstract
A resist composition for forming a upper resist layer and a process for forming a pattern thereby are disclosed. This resist comprises an azide compound and a polyacrylic copolymer of the following formula (1): ##STR1## wherein, R.sub.1 means CH.sub.3, CF.sub.3, CN, CH.sub.2 OH, or CH.sub.2 CO.sub.2 R, wherein R means an alkyl having 1 to 5 carbon atoms R.sub.2 means a hydrocarbon radical having at least one Si, R.sub.3 means OH, O--C(CH.sub.3).sub.3, NH.sub.2 , or NHCH.sub.2 OH, and, a ratio of n to m is more than 0 and is 1 or less than 1. Whereby a finely-resolved resist pattern is obtained by a preset process for forming the resist pattern.
Claims4
A process for forming a multilevel resist pattern, which comprises steps of:
- coating a semiconductor substrate to be fabricated with a resist to form a lower resist layer thereon;
- coating the lower resist layer with a resist composition comprising an azide compound and a copolymer of the formula ( 1 ):
- ##STR8## wherein, R.sub.1 means CH.sub.3, CF.sub.3, CN, CH.sub.2 OH, or CH.sub.2 CO.sub.2 R, wherein R means an alkyl having 1 to 5 carbon atoms
- R.sub.2 means a hydrocarbon radical having at least one Si,
- R.sub.3 means OH, O--C(CH.sub.3).sub.3, NH.sub.2, or NHCH.sub.2 OH, and, a ratio of n to m is more than 0 and is 1 or less than 1, to form an upper resist layer thereon,
- heating the substrate to cause a cross-linking in the said upper resist layer,
- exposing the resist to a predetermined pattern of high energy radiation to form a latent image in the resist layer corresponding to the radiation pattern, and
- developing the pattern-wise exposed resist layer to selectively remove the exposed areas of the resist with a developer to form an upper resist pattern.
Dependencies are inferred from the claim text.