Preparation of tertiarybutyldimethylantimony and use thereof
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorRobert W. Gedridge, Jr.
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AssigneeThe United States of America as represented by the Secretary of the Navy
InventorRobert W. Gedridge, Jr.
Estimating the term…
The new compound tertiarybutyldimethylantimony is prepared by reacting an timony trihalide SbX.sub.3 with the tertiarybutyl Grignard reagent ((CH.sub.3).sub.3 C)MgX, treating the resulting product with the methyl Grignard reagent (CH.sub.3)MgX. where X is a halide, and recovering tertiarybutyldimethylantimony from the reaction mixture. The reaction is preferably carried out by a one pot synthesis in a suitable solvent such as diethyl either using approximately one equivalent of ((CH.sub.3).sub.3 C)MgX in relation to the SbX.sub.3 at about -50.degree. C., followed by treatment with approximately two equivalents of (CH.sub.3)MgX in relation to the SbX.sub.3 at about 0.degree. C. The tertiarybutyldimethylantimony is used as a precursor in forming antimony-containing semiconductor material by chemical vapor deposition.
The compound having the formula ((CH.sub.3).sub.3 C)(CH.sub.3).sub.2 Sb.
A process for preparing the compound having the formula ((CH.sub.3).sub.3 C)(CH.sub.3).sub.2 Sb which comprises:
A process or preparing the compound having the formula (CH.sub.3).sub.3 C)(CH.sub.3).sub.2 Sb which comprises:
In a process of forming an antimony-containing semiconductor material by chemical vapor deposition, the improvement comprising using ((CH.sub.3).sub.3 C)(CH.sub.3).sub.2 Sb as a source of antimony.
Dependencies are inferred from the claim text.