Cubic boron nitride phosphide films
AssigneeGeneral Motors Corporation
InventorsGary L. Doll, Kevin C. Baucom
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AssigneeGeneral Motors Corporation
InventorsGary L. Doll, Kevin C. Baucom
Estimating the term…
Thin films of single crystal, cubic boron nitride phosphide are provided on, and in crystallographic registry with, an underlying silicon substrate which is oriented along a single crystallographic axis. The cubic boron nitride phosphide films are deposited using laser ablation methods. The boron nitride phosphide film has a crystallographic lattice constant which can be systematically varied depending upon the desired film composition and processing parameters. Preferably, the target, and accordingly the resulting thin film composition, is characterized by a chemical formula of BN.sub.(1-x) P.sub.(x) where x is about 0.23. This particular composition results in a crystallographic lattice constant essentially equal to the single crystal silicon substrate. The film may also have the formula BN1-xPx where x<0.ltoreq.1. The phosphorus concentration may also be decreased to zero throughout the film so as to provide boron nitride material at the surface, which is characterized by a good crystallographic lattice match with the underlying substrate. The resulting films are particularly suitable for semiconducting applications over a wide range of temperatures.
A method for forming thin films of crystalline cub boron nitride phosphide comprising the following steps:
A method of forming a cubic boron nitride film substantially free of pin holes on a silicon substrate comprising:
A method comprising:
A method of a film of ternary compound comprising:
A method of making an article comprising:
Dependencies are inferred from the claim text.