Process for fabricating a substrate with thin film capacitor

A method for fabricating a thin-film capacitor comprising the steps of:

• forming a plurality of through holes through an electrically nonconductive substrate between a front side substrate surface and a back side substrate surface opposite the front side surface;
• filling the plurality of through holes with an electrically conductive material;
• depositing a back side metalization layer onto the back side surface of the nonconductive substrate;
• depositing a bottom contact layer onto the front side surface of the nonconductive substrate;
• electrically isolating a bottom contact power terminal in the bottom contact layer;
• forming an insulating layer on selected portions of the surface of the bottom contact layer, including selected portions of the bottom contact power terminal;
• depositing a top contact layer onto the surface of the insulating layer;
• forming a front side ground terminal and a front side power terminal in the top contact layer;
• and
• forming a back side ground terminal and a back side power terminal in the back side metalization layer in electrical contact with the front side ground terminal and front side power terminal, respectively.

A method for fabricating a thin-film bypass capacitor comprising the steps of:

• applying a sequence of back side metalization layers to a back side surface of an electrically nonconducting substrate, the substrate having a back side surface and a front side surface opposite to the back side surface, the substrate comprising a plurality of electrically conductive ground vias and power vias extending through the substrate;
• applying a sequence of bottom contact layers to the front side surface of the substrate;
• creating a bottom contact power terminal by removing select portions of the bottom contact layers to form bottom contact notches, the bottom contact notches electrically isolating a portion of the bottom contact layers adjacent to such a power via from the rest of the bottom contact layers for forming the bottom contact power terminal;
• applying a bottom contact metalization layer onto the surface of the bottom contact layers;
• forming an insulating layer at the surface of the bottom contact metalization layer;
• applying a sequence of top contact layers to the surface of the insulating layer;
• creating a front side ground terminal by removing select portions of the top contact layers to form ground terminal notches, the ground terminal notches electrically isolating a portion of the top contact layers adjacent to such a ground via from the rest of the top contact layers for forming the front side ground terminal;
• and
• creating a back side ground terminal and a back side power terminal by removing select portions of the back side metalization layers, the remaining portions of the back side metalization layers forming a back side ground terminal adjacent to the ground via, and a back side power terminal adjacent to the power via.