Method of making an array of electron emitters

Abstract

This is a method of forming an array of electron emitters at the face of a semiconductor layer. The method comprises the steps of depositing a layer of polycrystalline silicon on a face of a semiconductor workpiece; doping the polycrystalline silicon layer to render the polycrystalline silicon layer conductive; and for each of a plurality of emitter cells, performing an orientation-dependent polycrystalline silicon etch to define a pyramid for the cell having a base affixed to the workpiece and an upstanding tip opposed to the base. Preferably the method also includes the steps of forming a field effect transistor at the face of the workpiece prior to the depositing of the layer, with the pyramid having a base in conductive contact with the drain of the transistor. The polycrystalline silicon layer may be doped in situ after deposition.

Dependencies are inferred from the claim text.