Buried layer III-V semiconductor devices with impurity induced layer disordering

A visible light-emitting semiconductor laser based on impurity induced layer disordering and having electrodes and a resonant cavity and comprising:

• a semiconductor body portion made up of column III-Column V constituent crystal or mixed crystal compound regions, where the Column III constituent is selected from the group consisting of Ga, Al, and In, and the Column V constituent is selected from the group consisting of As, P, and Sb;
• said body portion comprising a first acting as a substrate, over the first region second and third layers for optical guiding and carrier confining functions, a fourth layer located between the second and third layers and constituting the active laser region, said fourth layer containing at first portions Column III or Column V impurities in quantities sufficient to produce impurity induced layer disordering, the impurity induced layer disordering tending to cause strain generation at adjacent second portions of the fourth layer, said fourth layer having a thickness below a maximum value and such that said fourth layer remains substantially free of defects, said second and third layers also being substantially defect-free.

A semiconductor device having electrodes and comprising:

• a semiconductor body portion made up of column III-Column V constituent crystal or mixed crystal compound regions, where the Column III constituent is selected from the group consisting of Ga, Al, and In, and the Column V constituent is selected from the group consisting of As, Sb and P;
• said body portion comprising a first p-type-region comprising AlInP, adjacent the first region a second region comprising AlGaAs, said second region having p-type doping that is relatively high compared to that of the first region.

A light-emitting semiconductor laser based on impurity induced layer disordering and having elements and a resonant cavity and comprising:

• a semiconductor body portion made up of column III-Column V constituent crystal or mixed crystal compound regions, where the Column III constituent is selected from the group consisting of Ga, Al, and In, and the Column V constituent is selected from the group consisting of As, Sb and P;
• said body portion comprising a substrate, a first layer located between and bounded by second and third layers and with the first layer constituting a quantum well layer serving as the active laser region, said layers having first portions containing Column III or Column V impurities in quantities sufficient to produce impurity induced layer disordering, said first layer having a thickness below about 8 nm, said second and third layers having a thickness exceeding 45 nm and serving as confinement layers for the quantum well layer, said body portion being substantially defect-free.

A light-emitting semiconductor laser based on impurity induced layer disordering and having electrodes and a resonant cavity and comprising:

• a semiconductor body portion made up of column III-Column V constituent crystal or mixed crystal compound regions, where the Column III constituent is selected from the group consisting of Ga, Al, and In, and the Column V constituent is selected from the group consisting of As, P, and Sb;
• said body portion comprising a first region acting as a substrate, over the first region second and third layers for optical guiding and carrier confining functions, a fourth region located between the second and third layers and constituting the active laser region, said fourth layer containing at first portions Column III or Column V impurities in quantities sufficient to produce impurity induced layer disordering, the impurity induced layer disordering tending to cause strain generation at adjacent portions of the fourth layer, said fourth layer having a thickness below a maximum value and such that said fourth layer remains substantially free of defects, said second and third layers also being substantially defect-free, said fourth layer comprising AlGaInP.

A semiconductor device having electrodes and comprising:

• a semiconductor body portion made up of column III-column V constituent crystal or mixed crystal compound regions, where the Column III constituent is selected from the group consisting of Ga, Al, and In, and the Column V constituent is selected from the group consisting of As, Sb and P;
• said body portion comprising a first QW region, adjacent the first region second and third regions comprising AlGaAs, said second region having p-type doping of the order of 10.sup.19 /cm.sup.3 or higher.