Diamond thermistor
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
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Abstract
A diamond thermistor having a pair of diamond contact regions having a low resistance formed on a temperature sensing diamond substrate. The formation of the diamond contact regions is carried out by depositing a diamond film using a carbon compound gas and a dopant gas and etching the diamond film to leave the contact regions by an etchant including fluorine or oxygen.
Claims13
A diamond thermistor comprising:
- a diamond layer;
- a pair of impurity doped diamond layers formed on said diamond layer and spaced apart from one another;
- and
- a pair of electrodes respectively formed on said impurity doped diamond layers.
A diamond thermistor comprising:
- a substrate;
- a first diamond layer having a substantially intrinsic conductivity type formed on said substrate;
- a pair of impurity doped second diamond layers formed on said first diamond layers, said pair spaced apart from one another so that a temperature sensing region is defined therebetween;
- and
- a pair of electrodes formed on said pair of second diamond layers.
The diamond thermistor according to claim 25 wherein said impurity is boron.
The diamond thermistor of claim 24 wherein said substrate is a silicon substrate having a silicon nitride layer formed thereon.
A diamond thermistor comprising:
- a diamond substrate;
- a pair of impurity doped diamond layers formed with respect to said substrate;
- a temperature sensing region disposed between said diamond layers;
- and
- a pair of electrodes respectively formed on said diamond layers,
- wherein said temperature sensing region is formed at a projection of said substrate.
A diamond thermistor comprising:
- a temperature sensing substantially intrinsic diamond layer;
- and
- a pair of spaced apart electrodes formed directly on said diamond layer.
Dependencies are inferred from the claim text.