Tetrode biasing circuit
AssigneeTemic Telefunken microelectronic GmbH
InventorWilfried Quast
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Abstract
in a semiconductor array having a tetrode integrated in a semiconductor element, the tetrode comprises two field-effect transistors having a common semiconductor area forming the drain electrode of the first field-effect transistor and the source electrode of the second field-effect transistor. The semiconductor array has a three-pole array integrated in the semiconductor element and functioning as a feedback element, the input of the array is connected to the common semiconductor area of the tetrode. The output of the three-pole array is connected to the semiconductor area forming the gate electrode of the first field-effect transistor of the tetrode.
Claims13
A semiconductor array having a tetrode integrated in a semiconductor element, said tetrode comprising a first and a second field-effect transistor having a common semiconductor area that forms the drain electrode of said first field-effect transistor and the source electrode of said second field-effect transistor, wherein said semiconductor array has as a feedback element a three-pole array integrated in said semiconductor element, wherein the input of said three-pole array is connected to said common semiconductor area of said tetrode, and wherein the output of said three-pole array is connected to the semiconductor area forming the gate electrode of said first field-effect transistor of said tetrode.
Dependencies are inferred from the claim text.