Bulk charge modulated device photocell

A device for sensing light comprising:

• a first semiconductor layer of a first conductivity type;
• a source region of a second conductivity type in the first semiconductor layer, a first high voltage is applied to the source region during charge integration and a second high voltage is applied to the source region during readout;
• a drain region of the second conductivity type in the first semiconductor layer and spaced apart from the source region, a third high voltage is applied to the drain region during charge integration and a low voltage is applied to the drain region during readout, the low voltage is lower than the second high voltage;
• an insulator layer over the first semiconductor layer, and;
• a gate on the insulator layer over a portion of the first semiconductor layer between the source region and the drain region.

A device for sensing light comprising:

• a first semiconductor layer of a first conductivity type;
• a source region of a second conductivity type in the first semiconductor layer;
• a drain region of the second conductivity type in the first semiconductor layer and spaced apart from the source region;
• an insulator layer over the first semiconductor layer, and;
• a gate on the insulator layer over a portion of the first semiconductor layer between the source region and the drain region, the gate consists of at least two electrically isolated regions.

A device for sensing light comprising:

• a first semiconductor layer of a first conductivity type;
• a source region of a second conductivity type in the first semiconductor layer;
• a drain region of the second conductivity type in the first semiconductor layer and spaced apart from the source region;
• an insulator layer over the first semiconductor layer, and;
• a gate on the insulator layer over a portion of the first semiconductor layer between the source region and the drain region, the gate is a resistive region;
• a first conductive contact coupled to a first portion of the gate near the source region;
• and
• a second conductive contact coupled to a second portion of the gate near the drain region.