Semiconductor light-emitting device with InGaAlp
AssigneeKabushiki Kaisha Toshiba
InventorsToshihide Izumiya, Yasuo Ohba, Ako Hatano
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Abstract
A semiconductor light-emitting device comprises a light-emitting layer including a pn junction formed by a plurality of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x, y.ltoreq.1) layers, and a light-emitting-layer holding layer consisting of an indirect transition type Ga.sub.1-w Al.sub.w As (0.ltoreq.w.ltoreq.1) provided on an opposite side to a light-outputting side. The holding layer has a sufficiently small light absorption coefficient for the light from the light-emitting layer although its band gap is small and improves the light emission efficiency of the semiconductor light-emitting device.
Claims15
A light emitting diode, comprising:
- a light-emitting layer comprising p-type and n-type In.sub.x Ga.sub.y Al.sub.l-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) layers;
- a first electrode provided on a light-outputting side of the light-emitting layer;
- a first contact layer interposed between the light-emitting layer and the first electrode, the first contact layer being made of a group III-V compound semiconductor of the indirect transition type;
- a second electrode provided on an opposite side to the light-outputting side of the light-emitting layer;
- and
- a second contact layer interposed between the light-emitting layer and the second electrode, the second contact layer being made of a group III-V compound semiconductor.
A light emitting diode, comprising:
- a light-emitting layer comprising p-type and n-type In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x.ltoreq.1) (0.ltoreq.y.ltoreq.1) layers;
- a first electrode provided on a first light-outputting side of the light-emitting layer;
- a first contact layer interposed between the light-emitting layer and the first electrode, the first contact layer being made of a group III-V compound semiconductor of the indirect transition type;
- a second electrode provided on a second light-outputting side opposite to the first light-outputting side of the light-emitting layer;
- and
- a second contact layer interposed between the light-emitting layer and the second electrode, the second contact layer being made of a group III-V compound semiconductor of the indirect transition type.
A light emitting diode, comprising:
- a light-emitting layer comprising p-type and n-type In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) layers;
- a first electrode provided on a light-outputting side of the light-emitting layer;
- a second electrode provided on an opposite side to the light-outputting side of the light-emitting layer;
- and
- a contact layer interposed between the light-emitting layer and the first electrode, the contact layer being made of a group III-V compound semiconductor of the indirect transition type.
Dependencies are inferred from the claim text.