US 5,315,554 AGranted

Dynamic random access memory device with intermediate voltage generator interrupting power supply in test operation

AssigneeNEC Corporation

InventorYasuhiro Nanba

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Abstract

When a dynamic random access memory device is powered with an external power voltage, a first intermediate voltage generator produces an intermediate voltage from the external power voltage for supplying to the counter electrodes of the storage capacitors of memory cells and a precharge unit, and the first intermediate voltage generator is replaced with a second intermediate voltage generator after the internal power voltage becomes stable, wherein a switch transistor blocks the counter electrodes and the precharge unit from the second intermediate voltage generator during a test operation on bit lines, thereby effectively screening out defective products.

Claims5

Dependent claims

A semiconductor dynamic random access memory device having standard modes and a diagnostic mode of operation, comprising:

a) a memory cell array having a plurality of memory cells each addressable with a row address and a column address, each of said plurality of memory cells being implemented by a series combination of a switching transistor and a storage capacitor having an accumulated electrode and a counter electrode;
b) an addressing means responsive to row and column address bits for selecting one of said plurality of memory cells;
c) a plurality of bit lines selectively coupled with said plurality of memory cells, and conducted with the accumulating electrodes of the storage capacitors when said addressing means selects the memory cells;
d) a precharge unit coupled with said plurality of bit lines for charging said plurality of bit lines to a first intermediate voltage level;
e) a data input and output means selectively coupled with said plurality of bit lines for propagating a data bit between said one of said plurality of memory cells and a data port;
f) an intermediate voltage producing means operative to supply said first intermediate voltage to said precharge unit and a second intermediate voltage to the counter electrodes of the storage capacitors in said standard modes;
g) a diagnostic unit activated in said diagnostic mode, and producing a test control signal for carrying out at least a test operation on said bit lines to see whether or not leakage current flows therefrom;
and
h) a block means responsive to said test control signal for blocking said counter electrodes and said precharge unit from said first and second intermediate voltages during said test operation.

6 more elements

A semiconductor memory device comprising:

a) two pairs of bit line electrodes each coupled with a plurality of memory cells and a pair of dummy cells;
b) a node for supplying an intermediate voltage level to counter electrodes of memory capacitors incorporated in said plurality of memory cells;
c) an intermediate voltage producing circuit for supplying said intermediate voltage produced from an internal power voltage to said bit line electrodes;
d) a test mode generating circuit for supplying test mode signals to said intermediate voltage producing circuit;
and
e) a means responsive to first, second and third test mode signals for interrupting said intermediate voltage to said counter electrodes and said bit line electrodes, and including
e-1) a first insulating gate type field effect transistor having a first node supplied with said intermediate voltage level and a gate electrode supplied with a complementary signal of said first test mode signal,
e-2) a second insulating gate type field effect transistor having a first node coupled with a second node of said first insulating gate type field effect transistor,
e-3) a third insulating gate type field effect transistor having a first node coupled with said second node of said first insulating gate type field effect transistor,
e-4) a fourth insulating gate type field effect transistor having a gate electrode supplied with said second test mode signal through a first inverter and a first electrode coupled with a high power voltage line,
e-5) a fifth insulating gate type field effect transistor having a gate electrode supplied with said third test mode signal through second and third inverters and a first electrode coupled with a ground voltage line,
e-6) a NOR gate supplied with said second and third test mode signals, and having an output node coupled with a gate electrode of said second insulating gate type field effect transistor,
e-7) a sixth insulating gate type field effect transistor having a gate electrode supplied with a power-on signal, said power-on signal being further supplied to a gate electrode of said third insulating gate type field effect transistor, a second node of said second insulating gate type field effect transistor being coupled with a second node of said fifth insulating gate type field effect transistor, a second node of said fourth insulating gate type field effect transistor and a first node of said sixth insulating gate type field effect transistor,
e-8) a first output node coupled with a second node of said sixth insulating gate type field effect transistor for supplying said intermediate voltage level to said node for supplying said intermediate voltage level to said counter electrodes, and
e-9) a second output node coupled with a second node of said third insulating gate type field effect transistor for supplying said intermediate voltage level to said bit line electrodes.

12 more elements

Dependencies are inferred from the claim text.

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Abstract