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US 5,315,553 AGranted
Memory circuit test system using separate ROM having test values stored therein
AssigneeTexas Instruments Incorporated
InventorJohn O. Morris
Life of this patent
Estimating the term…
Abstract
A memory test method and system are described which comprises a first memory array and a second memory array coupled to a plurality of row address lines within a memory system. During the testing of the memory system, row decode logic is used to sequentially access each of the row address lines The second memory array stores a predetermined value associated with each of the row address lines. Accordingly, accuracy of the row decode logic and continuity of the row address lines can be verified without the necessity of programming each memory location within the first memory array.
Claims14
A method of testing a memory circuit, comprising the steps of:
- sequentially activating each of a plurality of row address lines, each row address line coupled to a single row of memory locations within a first memory array of the memory circuit;
- storing a unique value associated with each of the row address lines in a read only memory array of the memory circuit, the row address lines also coupled to the read only memory array;
- sequentially outputting each of the unique values responsive to said step of sequentially activating the row address lines;
- and
- determining whether a correct value is output when each of the row address lines is activated.
2 more elements
A memory circuit, comprising:
- a first memory array comprising a plurality of first memory storage locations for storing data, said first memory array coupled to a plurality of row address lines;
- a row decode address circuit coupled to said plurality of row address lines to receive an address and activate one of said plurality of row address lines in response to the address;
- and
- a read only memory array coupled to said plurality of row address lines and comprising a plurality of second memory storage locations associated with and coupled, respectively, to each of said plurality of row address lines, each of said second memory storage locations storing a different predetermined value such that access to each of said second memory storage locations through said row address lines can be verified by successful retrieval of said predetermined values.
1 more element
A method for constructing a memory circuit, comprising the steps of:
- forming a plurality of row address lines;
- forming a first memory array coupled to the plurality of row address lines and comprising a plurality of first memory storage locations for storing data;
- forming a row decode address circuit coupled to the plurality of row address lines to receive an address and activate one of the plurality of row address lines in response to the address;
- and
- forming a read only memory array coupled to the plurality of row address lines and comprising a plurality of second memory storage locations associated with and coupled, respectively, to each of the plurality of row address lines, each of the second memory storage locations provided to store a different predetermined value such that access to each of the second memory storage locations through the row address lines can be verified by successful retrieval of said predetermined values.
2 more elements
A memory circuit, comprising:
- a non-volatile memory array comprising a plurality of first memory storage locations provided for storing data and coupled to a plurality of row address lines;
- a row decode address circuit coupled to said plurality of row address lines to receive an address and activate one of said plurality of row address lines in response to said address;
- a read only memory array coupled to said plurality of row address lines and comprising a plurality of second memory storage locations associated with and coupled, respectively, to each of said plurality of row address lines, each of said second memory storage locations storing data representing a difference predetermined value such that access to each of said second memory storage locations through said row address lines can be verified by successful retrieval of said predetermined values, said row address lines passing from said row address decode circuit through said non-volatile memory array to said read only memory array such that row address signals generated by said row address decode circuit must pass through said non-volatile memory array to reach said read only memory array;
- first data output lines, coupled with said non-volatile memory array, to communicate data stored in said first memory storage locations within said non-volatile memory array when said first memory storage locations are selected by activating one of said row address lines associated with a particular set of said first memory storage locations;
- second data output lines, coupled with said read only memory array, to communicate said predetermined values stored in said second memory storage locations within said read only memory array when said second memory storage locations are selected by activating one of said row address lines associated with a particular set of said second memory storage locations;
- and
- multiplexer circuitry, coupled to said first and second data output lines and an output control signal, to output data communicated from said non-volatile memory array through said first data output lines or data communicated from said read only memory array through said second data output lines inn response to said output control signal.
4 more elements
Dependencies are inferred from the claim text.