Magnetoresistive sensor having antiferromagnetic layer for exchange bias
AssigneeInternational Business Machines Corporation
InventorsTsann Lin, James K. Howard, Cherngye Hwang, Daniele Mauri, Norbert Staud
Life of this patent
Estimating the term…
Loading patent…
AssigneeInternational Business Machines Corporation
InventorsTsann Lin, James K. Howard, Cherngye Hwang, Daniele Mauri, Norbert Staud
Estimating the term…
A magnetoresistive (MR) sensor comprising a sputtered layer of ferromagnetic material and a sputtered layer of antiferromagnetic nickel-manganese (Ni-Mn) to provide an exchange coupled longitudinal bias field in the MR element is described. The antiferromagnetic layer overlays the MR layer and may be patterned to provide the longitudinal bias field only in the end regions of the MR layer. Alternatively, the antiferromagnetic layer can underlay the MR layer with a Zr underlayer to enhance the exchange-coupled field. As initially deposited, the Ni-Mn layer is face-centered-cubic and exhibits little or no exchange-coupled field. After one annealing cycle at a relatively low temperature, the Ni-Mn layer is face-centered-tetragonal and exhibits increased crystallographic ordering and provides sufficient exchange coupling for the MR element to operate. Addition of chromium to the Ni-Mn alloy provides increased corrosion resistance.
A magnetoresistive read sensor of the type having a layer of antiferromagnetic material in direct contact with a layer of magnetoresistive ferromagnetic material for inducing a longitudinal bias field in the ferromagnetic layer wherein said antiferromagnetic layer comprises an alloy of manganese (Mn), at least a portion of said Mn alloy layer having a face-centered-tetragonal (fct) structure.
Dependencies are inferred from the claim text.