Magnetoresistance effect element
AssigneesUbe Industries, Ltd., Kanegafuchi Chemical Industry Co., Ltd., Nippon Steel Corporation, TDK Corporation, Tosoh Corporation, Toyo Boseki Kabushiki Kaisha, Nippon Mining Co., Ltd., NEC Corporation, Matsushita electgric Industrial Co., Ltd., Seisan Kaihatsu Kagaku Kenkyusho
InventorsTeruya Shinjo, Hidefumi Yamamoto, Toshio Takada
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Abstract
A magnetoresistance effect element including a substrate and at least two magnetic thin layers which are laminated with interposing a non-magnetic thin layer therebetween on said substrate, wherein adjacent magnetic thin layers through the non-magnetic thin layer have different coercive forces and each of the magnetic thin layers and the non-magnetic layer has a thickness of not larger than 200 .ANG., which has a large magnetoresistance ratio of several % to several ten % at a small external magnetic field of several Oe to several ten Oe and can provide a MR sensor having a high sensitivity and a MR head which achieves high density magnetic recording.
Claims11
A magnetoresistance effect element having a multilayer structure of the following layers:
- [(a layer of an alloy comprising Ni and Fe)/(a layer of Cu or its alloy)/
- (a layer of Co or its alloy)/(Cu or its alloy)].sub.n wherein n is the number of the above multilayer structure and is an integer from 3 to 15, and a thickness of the layer of Cu or its alloy is from 30 to 55 .ANG..
Dependencies are inferred from the claim text.