High voltage switching circuit
AssigneeSamsung Electronics Co., Ltd.
InventorWoung-Moo Lee
Life of this patent
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Abstract
A high voltage switching circuit includes a buffer circuit for buffering an input signal, a high voltage pumping circuit for producing a desired voltage in response to an output signal of the buffer circuit, and a disconnecting circuit for disconnecting the buffer circuit and high voltage pumping circuit when the output voltage of the buffer circuit is the source voltage and that of the high voltage pumping circuit is a high voltage, wherein the disconnecting circuit includes an enhancement transistor and depletion transistor connected in series, gates of the transistors being commonly connected to the source voltage.
Claims6
A high voltage switching circuit comprising:
- a buffer means for buffering an input signal;
- a high voltage pumping means for producing a given voltage in response to an output signal of said buffer means;
- and
- a disconnecting means connected between said buffer means and said high voltage pumping means, for disconnecting said buffer means and high voltage pumping circuit when said output signal of said buffer means is a source voltage and said given voltage of said high voltage pumping circuit is a high voltage, said disconnecting means comprising an enhancement transistor and depletion transistor connected in series, gates of said enhancement transistor and said depletion transistor being commonly connected to said source voltage.
A high voltage switching circuit comprising:
- a buffer means for buffering an input signal;
- a high voltage pumping circuit for producing a desired voltage in response to an output signal of said buffer means;
- and
- a disconnecting transistor connected between said buffer means and said high voltage pumping circuit for disconnecting said buffer means and said high voltage pumping circuit when said output signal of said buffer means is a source voltage and said desired voltage of said high voltage pumping circuit is a high voltage, wherein a first channel region adjacent to a source of said disconnecting transistor has a different conductive type from a channel region adjacent to a drain of said disconnecting transistor.
Dependencies are inferred from the claim text.