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AssigneeMitsubishi Denki Kabushiki Kaisha
InventorKazutami Arimoto
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A semiconductor device having an internal voltage down converter includes a circuit operating with an externally applied power supply voltage, a circuit operating with an external stepped-down voltage as an operation power supply voltage, and substrate voltage generators for generating a substrate potential, or a substrate bias voltage according to a state of the internal stepped-down voltage. The first substrate voltage generator includes a first generating circuit operating with the externally applied power supply voltage, a second generating circuit operating with the internal stepped-down voltage, and a circuit for operating the first generating circuit in a period from turn-on of the external power supply until the internal stepped-down voltage becomes stable, and for operating the second generating circuit thereafter. The second substrate voltage generator includes first and second generating circuits, and a circuit responsive to the substrate voltage for selectively activating the first and second generating circuits. Those constructions make it possible to stably apply a substrate voltage corresponding to an operation voltage to the substrate region.
A substrate voltage generator in a semiconductor device having a voltage down converter for stepping down an externally applied power supply voltage to a prescribed voltage and generating an internal stepped-down power supply voltage, said semiconductor device being formed on a semiconductor substrate, said substrate voltage generator comprising:
Dependencies are inferred from the claim text.