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US 5,315,139 AGranted
Power semiconductor integrated circuit device without concentration of electric field
AssigneeKabushiki Kaisha Toshiba
InventorKoichi Endo
Life of this patent
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Abstract
There is provided a power semiconductor integrated circuit device without lowering a breakdown voltage of a pn junction located below a wiring layer to which a high voltage is applied. The device includes an N.sup.- -type semiconductor substrate which is provided with an N.sup.+ -type region and a P.sup.+ -type region to form, for example, a lateral diode. An insulating film is formed over the substrate surface, on which a wiring layer is provided so as to be connected to the N.sup.+ -type region and to pass over the P.sup.+ -type region. A film resistor connected between the N.sup.+ -type region and the P.sup.+ -type region is formed in the insulating film so as to be crossed by the wiring layer at least once.
Claims14
A power semiconductor integrated circuit device comprising:
- a semiconductor substrate of a first conductivity type;
- a first semiconductor region of said first conductivity type provided in said semiconductor substrate;
- a second semiconductor region of a second conductivity type provided in said semiconductor substrate to be spaced apart from said first semiconductor region;
- an insulating film provided on said semiconductor substrate to cover at least partly said first and second semiconductor regions;
- a wiring layer provided on said insulating film to be connected to one of said first and second semiconductor regions and to extend over the other of said first and second semiconductor regions;
- and
- a film resistor formed in said insulating film to be connected between said first and second semiconductor regions, said film resistor being disposed above said semiconductor substrate to be crossed by said wiring layer at least once.
4 more elements
A power semiconductor integrated circuit device comprising:
- a semiconductor substrate of a first conductivity type;
- a first semiconductor region of said first conductivity type provided in said semiconductor substrate;
- a second semiconductor region of a second conductivity type provided in said semiconductor substrate to be spaced apart from said first semiconductor region;
- a third semiconductor region of said first conductivity type provided in said second semiconductor region;
- an insulating film provided on said semiconductor substrate to cover at least partly said first, second and third semiconductor regions;
- a wiring layer provided on said insulating film to be connected to said first semiconductor region and to extend over said second semiconductor region;
- and
- a film resistor buried in said insulating film, said film resistor being disposed above said semiconductor substrate to be crossed by said wiring layer at least once, one end of said film resistor being connected to said first semiconductor region, the other end of said film resistor being arranged between said semiconductor substrate and said third semiconductor region above a portion of said second semiconductor region.
5 more elements
A power semiconductor integrated circuit device comprising:
- a semiconductor substrate of a first conductivity type;
- a first semiconductor region of said first conductivity type provided in said semiconductor substrate;
- a second semiconductor region of a second conductivity type provided in said semiconductor substrate to be spaced apart from said first semiconductor region;
- a third semiconductor region of said first conductivity type provided in said second semiconductor region;
- an insulating film provided on said semiconductor substrate to cover at least partly said first, second and third semiconductor regions;
- a wiring layer provided on said insulating film to be connected to said first semiconductor region and to extend over said second semiconductor region;
- and
- a film resistor buried in said insulating film, said film resistor being disposed above said semiconductor substrate to be crossed by said wiring layer at least once, one end of said film resistor being connected to said first semiconductor region, the other end of said film resistor being connected to one of said second and third semiconductor regions.
5 more elements
A power semiconductor integrated circuit device comprising:
- a semiconductor substrate of a first conductivity type;
- a first semiconductor region of a second conductivity type provided in said semiconductor substrate;
- a second semiconductor region of said second conductivity type provided in said semiconductor substrate to be spaced apart from said first semiconductor region;
- a third semiconductor region of said first conductivity type provided in said second semiconductor region;
- an insulating film provided on said semiconductor substrate to cover at least partly said first, second and third semiconductor regions;
- a wiring layer provided on said insulating film to be connected to said first semiconductor region and to extend over said second semiconductor region;
- and
- a film resistor buried in said insulating film, said film resistor being disposed above said semiconductor substrate to be crossed by said wiring layer at least once, one end of said film resistor being connected to said first semiconductor region, the other end of said film resistor being arranged between said semiconductor substrate and said third semiconductor region above a portion of said second semiconductor region.
5 more elements
Dependencies are inferred from the claim text.