Preparing thin film of oxide superconductor
AssigneeSumitomo Electric Industries, Ltd.
InventorsTakashi Matsuura, Kenjiro Higaki, Hideo Itozaki
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Abstract
A process for preparing a thin film of oxide superconductor on a single crystal substrate of semiconductor by RF sputtering. At first, an under-layer of an oxide having a thickness of 50 to 200 .ANG. is deposited on the single crystal substrate of semiconductor at a substrate temperature of lower than 500.degree. C., and secondly an upper-layer of superconducting oxide material is deposited on said under-layer at a substrate temperature of higher than 600.degree. C.
Claims8
A process for preparing a film of oxide superconductor on a single crystal substrate of semiconductor, which comprises depositing firstly by RF sputtering an under-layer of a superconducting oxide material having a thickness of 50 to 200 .ANG. on said single crystal substrate of semiconductor at a substrate temperature between 300.degree. and 500.degree. C., and depositing secondly by RF sputtering an upper-layer of a superconducting oxide material on said under-layer at a substrate temperature of higher than 600.degree. C., said upper-layer of superconducting oxide material having a thickness which is more than 500 .ANG. thicker than said under-layer wherein both said under-layer and said upper-layer are deposited in a same vacuum chamber.
The process set forth in claim 5 wherein the superconducting oxide material of said under-layer has a similar crystal structure or lattice constant to that of said upper-layer.
Dependencies are inferred from the claim text.