Method for dicing a semiconductor wafer
AssigneeKabushiki Kaisha Toshiba
InventorSouichi Imamura
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Abstract
A method of dicing a wafer of III-V compound material without causing chipping and cracks. The method includes the steps of forming a scribe line on a surface of the wafer orthogonal to a crystal plane (011) by means of a scribing method, forming a groove in the semiconductor wafer in parallel to the crystal plane (011) by means of a grinding-cutting method, and breaking the semiconductor wafer along the scribe line and the groove.
Claims9
A method for dicing a wafer of III-V compound semiconductor material, the method comprising the steps of:
- forming a scribe line on a surface of the wafer orthogonal to a crystal plane (011) by means of a scribing method;
- forming a groove in the semiconductor wafer in parallel to the crystal plane (011) by means of a grinding-cutting method;
- and
- breaking the semiconductor wafer along the scribe line and the groove.
In a method for dicing a wafer of III-V compound semiconductor material, the method comprising two distinct steps for forming a scribe line and a groove in the semiconductor material, comprising the steps of:
- forming a scribe line on a surface of the wafer orthogonal to a crystal plane (011) by means of a scribing method;
- forming a groove in the semiconductor wafer in parallel to the crystal plane (011) by means of a grinding-cutting method;
- and
- breaking the semiconductor wafer along the scribe line and the groove.
A method for dicing a wafer of III-V compound semiconductor material, the method comprising the steps of:
- forming a scribe line on a surface of the wafer orthogonal to a crystal plane (011) by means of a scribing method;
- cutting through the semiconductor wafer in grooves parallel to the crystal plane by means of a grinding-cutting method;
- and
- breaking the semiconductor wafer along the scribe line.
Dependencies are inferred from the claim text.