Method for making a semiconductor laser

A method for manufacturing a vertical cavity, surface-emitting laser (to be referred to as a VCSEL), the method comprising the steps of providing a gallium arsenide substrate having approximately a (100) growth surface, epitaxially growing a distributed Bragg reflector (to be referred to as a DBR) on the growth surface, and performing at least one additional step toward completion of the VCSEL, CHARACTERIZED IN THAT

• the growth surface is tilted by at least 1.degree., and not more than about 7.degree., from the orientation of a (100) surface toward the orientation of a (111)A surface;
• the DBR comprises at least ten layers of alternating composition;
• the DBR layers of alternating composition comprise, in alternation, Al.sub.x Ga.sub.1-x As and Al.sub.y Ga.sub.1-y As, wherein one of x and y is greater than 0.35, and the other of x and y is less than or equal to 0.35;
• and
• during the step of epitaxially growing the DBR, the substrate temperature is less than 600.degree. C.