Insulation layer forming method
AssigneeSony Corporation
InventorMasakazu Muroyama
Life of this patent
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Abstract
An insulation layer forming method for processing a substrate having a first surface area covered with a photo resist mask pattern and a second surface area uncovered with the photo resist mask pattern to form an SiO2 insulation layer on the second surface area of the substrate. The method comprises the steps of dipping the substrate in an organic solvent having no compatibility with water and photo resist, recirculating the organic solvent under heat to remove water from the substrate, solving an organic silicone compound in the organic solvent, and recirculating the organic solvent having the organic silicone compound under heat to form the SiO2 insulation layer while removing a by-product.
Claims14
An insulation layer forming method for processing a substrate having a first surface area covered with a photo resist mask pattern and a second surface area uncovered with the photo resist mask pattern to form a siloxane insulation layer on the second surface area of the substrate, the method comprising the steps of:
- dipping the substrate in an organic solvent having no compatibility with water and photo resist;
- recirculating the organic solvent under heat to remove water from substrate;
- solving an organic silicon compound in the organic solvent;
- and
- recirculating the organic solvent having the organic silicon compound under heat to form the siloxane insulation layer while removing a by-product.
Dependencies are inferred from the claim text.