US 5,314,667 AGranted

Method and apparatus for single crystal silicon production

OwnerJohn C. Lim, William A. Kochinventors

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Abstract

There is disclosed a method for growing single crystal material, particularly silicon, in modified Czochralski process furnaces and chambers. The Czochralski process equipment is modified to permit continuous addition of polycrystalline material, preferably in dry powdered form to a molten bath of the material that is maintained at a constant shallow depth. For this purpose, a circular baffle is placed within the crucible containing the molten bath of the material, dividing the crucible into an annular feed zone and a central crystal growth zone. A cylindrical boule is withdrawn from the central crystal growth zone. The surrounding walls of the crucible, and graphite cup that supports the crucible, provide a heating and annealing zone in which the boule is continuously annealed as it is withdrawn from the molten pool. Dopants are also introduced into the annular feed zone, either separately or admixed with the polycrystalline material.

Claims8

Dependent claims

An apparatus suitable for single crystal boule manufacture from a shallow, molten pool of silicon material which comprises:

a. an enclosed housing having a first through opening supporting a rotatably mounted shaft;
b. a support platform carried on the received end of said shaft, centrally located within said housing and carried thereon, a substantially flat-bottomed, quartz crucible resting within a graphite cup, said crucible and cup having circular bottom walls and cylindrical side walls;
c. a furnace entirely surrounding said crucible and cup, and formed of a cylindrical heater closely surrounding said cylindrical side walls, and an annular bottom plate heater located beneath the said circular bottom walls;
d. a quartz ring weir concentrically received within said crucible and having a diameter from about 20 to 50 percent the diameter of said crucible and a height from about 2.25 to 3.5 inches and from 18.75 to 31.5 percent of the diameter of the ring, and supported on said bottom wall of said crucible to divide said crucible into an outer annular zone and a central zone and located a slight distance above said bottom wall to permit molten silicon to flow from said annular zone to said central zone;
e. a shallow, molten pool of silicon within said crucible and having a depth no greater than 2 inches with the upper level thereof located below the upper edge of said ring;
f. a centrally located boule withdrawal compartment extending coaxially with said shaft and including means to dip a seed crystal of material into said molten pool contained within said central zone of said crucible and to slowly withdraw said boule therefrom;
g. means to slowly rotate said shaft and support plate and said crucible and cup supported thereon;
h. means to slowly rotate said boule counterrotationally to the rotation of said shaft;
and
i. a solids material supply conduit extending form a solids supply zone external of said housing and extending into said housing along the internal side wall of said crucible with its lowermost end terminating within said outer annular zone, for conveying granular polycrystalline material from said supply zone to said annular zone.

7 more elements

In a Czochralski process furnace and vacuum chamber wherein a housing is provided with evacuation means to maintain its interior as a vacuum chamber and said housing has a centrally located cylindrical furnace which surrounds a crucible nested within a graphite cup which are mounted on a platform supported on a central shaft for rotational movement, and wherein said housing also has a communicating boule withdrawal chamber extending vertically axially therefrom, the improvement which comprises:

a. a substantially flat-bottomed crucible having a cylindrical side wall and mounted on said platform and an annular bottom plate heater located beneath said flat-bottomed crucible;
and
b. a quartz ring weir concentrically received within said crucible and having a diameter from about 20 to 50 percent the diameter of said crucible and a height from about 2.25 to 3.5 inches and from about 18.75 to 31.5 percent of the diameter of said ring and supported therein above said bottom wall of said crucible a slight distance to divide said crucible into an outer annular zone and a central zone;
c. a solids material supply conduit extending form a solids supply zone external of said housing and extending into said housing along the internal side wall of said crucible with its lowermost end terminating within said outer annular zones, for conveying granular polycrystalline material from said supply zone to said annular zone;
and
d. a shallow molten pool of silicon within said crucible having a depth no greater than 2 inches, and with its upper level beneath the upper edge of said ring.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 07/854,726Filed 23 Mar 1992 · continuation in part
Priority: 4 Mar 1991
Granted: 24 May 1994
Term ends: Not estimatedThe source records don’t support an estimate.

Classification7 codes

C30B 15/02
Single-crystal growth by pulling from a melt, e.g. Czochralski method: adding crystallising materials or reactants forming it in situ to the melt
C30B 15/12
Crucibles or containers for supporting the melt: double crucible methods
Y10T 117/1052
Seed pulling: including a sectioned crucible [e.g., double crucible, baffle]
Y10T 117/1056
Seed pulling: including details of precursor replenishment