Etching method and apparatus
AssigneeSony Corporation
InventorToshiharu Yanagida
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Abstract
A reactive ion etching method is described in which a silicon compound film formed on an underlying layer or a substrate is etched through a mask layer by a two-stage procedure. In the two-stage procedure, part of the silicon compound film is first etched with a gas containing a hydrogen-free carbon fluoride gas at a high etching rated and then with a gas containing a hydrogen-containing carbon fluoride gas while reducing the damage on the underlying layer or substrate. The apparatus for carrying out the method is also disclosed.
Claims8
A reactive ion etching method which comprises the steps of:
- forming a mask layer with a pattern on a silicon compound film;
- etching part of the silicon compound film along a depth of the film through the mask layer with a first etching gas consisting of a hydrogen-free carbon fluoride gas;
- and
- further etching the remaining portion of the silicon compound film along the depth with a second etching gas consisting of a hydrogen-containing carbon fluoride gas.
A reactive ion etching method which comprises the steps of:
- forming a mask layer with a pattern on a silicon compound film;
- etching part of the silicon compound film along a depth of the film through the mask layer with a first etching gas containing a hydrogen-free carbon fluoride gas, stopping the etching when less than 10 percent of the depth of the film is left;
- and
- further etching the remaining portion of the silicon compound film along the depth with a second etching gas containing a hydrogen-containing carbon fluoride gas.
Dependencies are inferred from the claim text.