Crystallization from high temperature solutions of Si in copper
AssigneeMidwest Research Institute
InventorTheodore F. Ciszek
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Abstract
A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 5X10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution melt of Si in Cu at about 16% to about 90% wt. Si at a temperature range of about 800.degree. C. to about 1400.degree. C. in an inert gas; immersing a substrate in the saturated solution melt; supersaturating the solution by lowering the temperature of the saturated solution melt and holding the substrate immersed in the solution melt for a period of time sufficient to cause growing Si to precipitate out of the solution to form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.
Claims6
A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 5.times.10.sup.16 Cu atoms/cc impurity, comprising:
- a) preparing saturated liquid solution melt of Si in Cu at about 16% to about 90% wt. Si at a temperature range of about 800.degree. C. to about 1400.degree. C. in an inert gas;
- b) applying a liquid CaCl.sub.2 layer to cover said solution melt;
- c) immersing or partially immersing a substrate in said saturated solution melt;
- d) supersaturating the solution by lowering the temperature of said saturated solution melt and holding said substrate immersed or partially immersed in said solution melt for a period of time sufficient to cause growing Si to precipitate out of said solution to form a crystalline layer of Si on said substrate;
- and
- e) withdrawing said substrate from said solution;
- said liquid CaCl.sub.2 placed on said melt prevents spurious nucleation of silicon.
Dependencies are inferred from the claim text.