Booster device
AssigneeSharp Kabushiki Kaisha
InventorNobuhiko Itoh
Life of this patent
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Abstract
A booster device of the present invention which boosts a voltage applied to a semiconductor memory device, includes: a first capacitor for supplying a voltage to the semiconductor memory device; a switching transistor for providing a charging current to the first capacitor; a first control transistor for switching a state of the switching transistor between a conducting state and a non-conducting state; a second capacitor for supplying a charge to the switching transistor, whereby the switching transistor uses the charge to perform the switching; and a second control transistor for controlling the first control transistor and for supplying a charge to the second capacitor.
Claims7
A booster device for boosting a voltage applied to a semiconductor memory device, comprising:
- a first capacitor for supplying a voltage to the semiconductor memory device;
- a switching means for providing a charging current to the first capacitor;
- a second capacitor for supplying a charge to the switching means, whereby the switching means uses the charge to perform the switching;
- a first control means for switching a state of the switching means between a conducting state and a non-conducting state and for supplying a charge to the second capacitor;
- and
- a second control means for controlling the first control means, the second control means being connected to the first control, the second capacitor and the switching means via a node, a potential at the node being applied to the second control means.
Dependencies are inferred from the claim text.