Structure of a CCD image sensor particularly on an interline transfer method
AssigneeGold Star Electron Co., Ltd.
InventorHun J. Jung
Life of this patent
Estimating the term…
Abstract
A p type well is formed on an n type substrate and photodiode and VCCD regions are repeatedly at predetermined intervals in turns on the surface of the p type well. In an interline transfer image sensor, the p type well is formed on the n type substrate and the photodiode and VCCD region of predetermined intervals are repeatedly formed in turn on the surface of the p type well. The p.sup.+ type channel ion stop layer is formed at both edges of the VCCD region and the pinning voltage is applied to the p.sup.+ type channel stop layer. Accordingly, the variable potential of the potential contour of the VCCD region is increased and the storing capacity of the charge and the efficiency of the charge transfer are maximized side by side.
Claims4
A structure of a charge coupled device (CCD) image sensor comprising:
- a second conductive type well formed on a first conductive type substrate;
- a plurality of first conductive type optical detection regions and a plurality of first conductive type buried channel regions (BCCDs) repeatedly formed in turn adjacent to one another on a surface of the second conductive type well;
- and
- second conductive type channel stop regions formed on each buried channel region at opposite edges of each buried channel region (BCCD) and adjacent to the optical detection regions.
Dependencies are inferred from the claim text.