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US 5,313,078 AGranted
Multi-layer silicon carbide light emitting diode having a PN junction
AssigneeSharp Kabushiki Kaisha
InventorsYoshihisa Fujii, Hajime Saito, Akira Suzuki
Life of this patent
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Abstract
This invention is a multi-layer pn type silicon carbide light emitting diode. A first n-type silicon carbide layer is deposited on an n-type substrate. The first n-type silicon carbide layer has an electron concentration larger than 1.times.10.sup.15 cm.sup.-3 and smaller than the electron concentration of the substrate and has a thickness of between 0.1 to 20 .mu.m. A second n-type silicon carbide layer is disposed over the first n-type layer. A first p-type silicon carbide layer is disposed on the second n-type layer to form a PN junction layer.
Claims22
A pn type SiC light emitting diode comprising:
- an n-type SiC single-crystal substrate provided with an ohmic electrode on a rear surface thereof, the substrate having an electron concentration;
- a first n-type SiC single-crystal layer overlaying said substrate;
- a second n-type SiC single-crystal layer overlaying said first n-type SiC single-crystal layer;
- and
- a first p-type SiC single-crystal layer overlaying said second n-type layer;
- said second n-type SiC single-crystal layer and said first p-type SiC layer being combined to form a pn junction layer;
- said first n-type SiC layer having an electron concentration larger than 1.times.10.sup.15 cm.sup.-3 and smaller than the electron concentration of said substrate, said first n-type SiC single-crystal layer having a thickness of 0.1 to 20 .mu.m;
- wherein said n-type SiC single-crystal substrate has (0001) Si surface and is inclined by an angle of 2 to 15 degrees from the (0001) Si surface in the <1120>
- direction.
6 more elements
A pn type SiC light emitting diode comprising:
- an n-type SiC single-crystal substrate provided with an ohmic electrode on a rear surface thereof, the substrate having an electron concentration;
- a first n-type SiC single-crystal layer overlaying said substrate;
- a second n-type SiC single-crystal layer overlaying said first n-type SiC single-crystal layer;
- and
- a first p-type SiC single-crystal layer overlaying said second n-type layer;
- said second n-type SiC single-crystal layer and said first p-type SiC layer being combined to form a pn junction layer;
- said first n-type SiC layer having an electron concentration larger than 1.times.10.sup.15 cm.sup.-3 and smaller than the electron concentration of said substrate, said first n-type SiC single-crystal layer having a thickness of 0.1 to 20 .mu.m;
- wherein said first p-type SiC single-crystal layer contains an aluminum acceptor and the ratio of an electron concentration in the second n-type SiC single-crystal layer to a hole concentration in the first p-type SiC single-crystal layer is in the range of 0.05 to 5.
5 more elements
A pn type SiC light emitting diode comprising:
- an n-type SiC single-crystal substrate provided with an ohmic electrode on a rear surface thereof, the substrate having an electron concentration;
- a first n-type SiC single-crystal layer overlaying said substrate;
- a second n-type SiC single-crystal layer overlaying said first n-type SiC single-crystal layer;
- and
- a first p-type SiC single-crystal layer overlaying said second n-type layer;
- said second n-type SiC single-crystal layer and said first p-type SiC layer being combined to form a pn junction layer;
- said first n-type SiC layer having an electron concentration larger than 1.times.10.sup.15 cm.sup.-3 and smaller than the electron concentration of said substrate, said first n-type SiC single-crystal layer having a thickness of 0.1 to 20 .mu.m;
- wherein said first p-type SiC single-crystal layer contains both an aluminum acceptor and a nitrogen donor, and the ratio of an electron concentration in said second n-type SiC single-crystal layer to a hole concentration in the first p-type SiC single-crystal layer is in the range of 0.05 to 10.
5 more elements
A pn type SiC light emitting diode comprising:
- an n-type SiC single-crystal substrate provided with an ohmic electrode on a rear surface thereof, the substrate having an electron concentration;
- a first n-type SiC single-crystal layer overlaying said substrate;
- a second n-type SiC single-crystal layer overlaying said first n-type SiC single-crystal layer;
- and
- a first p-type SiC single-crystal layer overlaying said second n-type layer;
- said second n-type SiC single-crystal layer and said first p-type SiC layer being combined to form a pn junction layer;
- said first n-type SiC layer having an electron concentration larger than 1.times.10.sup.15 cm.sup.-3 and smaller than the electron concentration of said substrate, said first n-type SiC single-crystal layer having a thickness of 0.1 to 20 .mu.m;
- wherein a second p-type SiC single-crystal layer and an ohmic electrode are further provided over said first p-type SiC single-crystal layer, said second p-type SiC single-crystal serving as a current diffusion layer whose resistivity exhibits a value of not more than 1.OMEGA..multidot.cm.
5 more elements
Dependencies are inferred from the claim text.