Integrated circuit fabrication method
AssigneeAT&T Bell Laboratories
InventorsArun K. Nanda, Mark J. Sundahl, Edward J. Vajda
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Abstract
A method for forming an anti-reflective coating useful in the fabrication of integrated circuits is discussed. Applicants have found that preheating semiconductor wafers prior to the application of amorphous silicon anti-reflective coatings tends to reduce undesirable particulates which may attach to the wafer. The process is illustratively performed in a Varian 3180 machine having four stations. Illustratively, the wafer may be preheated between 70.degree. C. and 175.degree. C. prior to and during the sputter deposition of an amorphous silicon anti-reflective coating.
Claims1
A method of semiconductor integrated circuit fabrication comprising:
- sputtering an amorphous silicon anti-reflective coating upon a substrate chosen from the group consisting of aluminum, spin-on glass and silicon dioxide, by
- preheating said substrate to a temperature between 70.degree. C. and 175.degree. C. prior to said sputtering step and maintaining said temperature during said sputtering.
Dependencies are inferred from the claim text.