Method of manufacturing semiconductor device having multilayer interconnection structure

A method of manufacturing a semiconductor device having a multilayer interconnection structure, comprising the steps of:

• forming first aluminum interconnection;
• depositing an insulating film to cover said first aluminum interconnection to form an interlayer insulating film;
• opening a contact hole whose bottom surface is the surface of said first aluminum interconnection in a predetermined position in said interlayer insulating film;
• forming a first titanium film on the surface of said interlayer insulating film and on the inner surface of said contact hole;
• forming a first titanium compound film on the surface of said first titanium film;
• burying tungsten in said contact hole with said first titanium film and said first titanium compound film interposed therebetween to form a tungsten plug;
• forming a second titanium film on said tungsten plug and on said first titanium compound film;
• forming a second titanium compound film on said second titanium film;
• and
• forming second aluminum interconnection on said second titanium compound film.